Effect of nitrogen doping on glow-discharge amorphous silicon films

Abstract

Abstract Amorphous silicon films prepared from a d.c. discharge of 10% SiH4–90% H2 mixture are found to have electrical and optical properties similar to those made from 100% SiH4. The effect of nitrogen on the properties of these films is investigated. It is found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material.