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Electron gas in semiconductor multiple quantum wires: Spatially indirect optical transitions
105
Citations
19
References
1989
Year
SemiconductorsQuantum ScienceCategoryquantum ElectronicsEngineeringPhysicsFree CarriersQuantum DeviceApplied PhysicsCondensed Matter PhysicsQuantum MaterialsElectron GasGaas QuantumIndirect Optical TransitionsQuantum Photonic DeviceOptoelectronicsFermi EnergySemiconductor Nanostructures
In optical experiments with laterally patterned GaAs quantum wells we observe confinement of free carriers to motion in one dimension. Optical recombination of band-gap transitions shows that free electrons and holes are confined in spatially indirect type-II multiple quantum wires. Resonant-inelastic-light-scattering spectra show intersubband excitations of the one-dimensional electron gas. From the optical measurements we obtain the Fermi energy as well as subband spacing and determine the linear free-electron density.
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