Long-wavelength emission in photo-pumped GaAs_1−xBi_xlaser with low temperature dependence of lasing wavelength

Abstract

This study demonstrates long-wavelength emission of up to 1204 nm in photo-pumped GaAs1−xBix lasers grown by molecular beam epitaxy under low temperature conditions. The characteristic temperature (T0) between 20 and 80 °C in the GaAs1−xBix lasers with Al0.3Ga0.7As electron blocking layer is approximately 100 K, which is larger than that of the typical 1.3-μm InGaAsP Fabry-Perot laser diodes (FP-LDs; T0 = 66 K). The temperature coefficient of the lasing wavelength is approximately 40% of that of InGaAsP FP-LDs.