X-ray attenuation of silicon in the energy range 25-50 keV

Abstract

Precise measurements of the X-ray attenuation coefficient of crystalline silicon have been made in the energy range 25 to 50 keV. The results are compared with theoretical predictions and earlier measurements. A systematic discrepancy between theory and experiment is observed. The most likely cause of the disagreement is thought to be the uncertainty in the estimation of the thermal diffuse scattering cross section.