New Low‐Loss Microwave Dielectric Material <scp> <scp>ZnTiNbTaO</scp> ₈ </scp>

Abstract

A new low‐loss, low‐temperature sinterable microwave dielectric material ZnTiNbTaO 8 was investigated for the first time. Single phase ZnTiNbTaO 8 was obtained by the conventional solid‐state route and sintered at 1120°C – 1200°C for 6 h. Theoretical density, packing fraction, bond valence, and oxygen octahedron distortion were calculated. The excellent microwave dielectric properties of ε = 36.3, Qf = 67 000 GHz, τ f = − 57.66 × 10 −6 /°C were obtained from the new ZnTiNbTaO 8 materials sintered at 1140°C for 6 h.