Lasing from InGaAs quantum dots in an injection microdisk

Abstract

An injection microdisk laser structure is realized using self-assembled InGaAs quantum dots (QDs) as the active layer. Single-mode continuous-wave lasing at ∼5 K from double layer (∼2.5×1010 cm−2 per layer) QDs in ∼4 μm diameter microdisks is reported. The threshold current of this device was as low as 69 μA. The estimated spontaneous emission factor is >0.05.