Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semiconductors

Abstract

Analytical solutions using a recently derived block-diagonalized Hamiltonian for strained wurtzite crystals are shown. The theoretical results are used to extract the deformation potentials from the experimental results of the $A$-, $B$-, and $C$-line exciton transition energies as a function of the $c$-axis strain using a set of recently reported elastic stiffness constants. The obtained parameters are then applied to calculate the wave functions, valence band energies, effective masses, optical-momentum matrix elements, exciton Bohr radius, and binding energy as a function of strain. These analytical and numerical results are useful for understanding the optical and electronic properties near the band edges of strained wurtzite crystals.