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Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Films on TiN/W Contact Plug
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Citations
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References
2007
Year
Materials ScienceMaterial AnalysisEngineeringGst Thin FilmsSurface ScienceApplied PhysicsSb NucleiContact HoleThin Film Process TechnologyThin FilmsChemical DepositionAtomic LayerChemical Vapor DepositionThin Film ProcessingTin/w Contact Plug
GST thin films were deposited by combined ALD and CVD at a temperature of 200 °C. The selective growth behavior of GST on the contact hole was observed. This was explained by the preferential nucleation property of Sb and subsequent adsorption of Te and Ge on the Sb nuclei on SiO2.
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