Chemistry of Materials · 2007 · 59 citations · 4 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAtomic Layer DepositionChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSurface AdsorptionAtomic Layer EpitaxyChemical Vapor Deposition MaterialsChemical Vapor Deposition NucleationContact MaterialsFilm Growth MechanismsSilicide ContactsThin-film Growth KineticsThin-film Growth Mechanisms
GST thin films were deposited by combined ALD and CVD at a temperature of 200 °C. The selective growth behavior of GST on the contact hole was observed. This was explained by the preferential nucleation property of Sb and subsequent adsorption of Te and Ge on the Sb nuclei on SiO2.
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