Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge₂Sb₂Te₅ Films on TiN/W Contact Plug

Abstract

GST thin films were deposited by combined ALD and CVD at a temperature of 200 °C. The selective growth behavior of GST on the contact hole was observed. This was explained by the preferential nucleation property of Sb and subsequent adsorption of Te and Ge on the Sb nuclei on SiO2.