In As ∕ Ga Sb cascaded active region superlattice light emitting diodes for operation at 3.8μm

Abstract

We report on the growth and characterization of InAs∕GaSb superlattice light emitting diodes (LEDs) operating in the midwave infrared at 3.8μm at 77K. Devices were grown by solid source molecular beam epitaxy on (100) GaSb substrates and were fabricated into 120×120μm2 mesa devices using wet etching. By employing an eight-stage cascaded active region design, output powers in excess of 1.5mW were achieved at 77K with 100mA peak drive current and a 50% duty cycle. Operating characteristics of the devices were examined from room temperature to 77K under quasi-dc excitation conditions.