Applied Physics Letters · 2015 · 107 citations · 20 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor Device MaterialsSurfactantsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsActivation EnergyActivation Energy AnalysisCarrier ConcentrationCompensation Ratio AnalysisDoping StrategiesP-type DopingResistivityValence Band Structure
High hole concentration was achieved in Mg-doped AlxGa1−xN (x ∼ 0.4) by using indium-surfactant-assisted delta doping method. A maximum carrier concentration of 4.75 × 1018 cm−3 was obtained, which is three times higher than that of the conventionally delta-doped sample. Sheet resistivity as low as 2.46 × 104 Ω/sq was realized, benefiting from the high hole concentration (p). Analysis results show that the Mg incorporation is effectively enhanced, while the compensation ratio and acceptor activation energy (EA) are significantly reduced by using In surfactant. It was also found that the In surfactant may induce stronger valence-band modulation, contributing to the decrease of EA and the increase of p.
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