Publication | Closed Access
On the measurement of dislocation core distributions in a GaAs/ZnTe/CdTe heterostructure by high-resolution transmission electron microscopy
23
Citations
10
References
2003
Year
EngineeringGaas/znte/cdte HeterostructureIi-vi SemiconductorCompound SemiconductorMaterials ScienceCrystalline DefectsPhysicsStrain LocalizationSolid MechanicsDislocation Map ReconstructionDefect FormationMicroelectronicsMicrostructureDislocation InteractionApplied PhysicsCondensed Matter PhysicsBurgers VectorsMultilayer HeterostructuresTensorial MapsDislocation Core Distributions
Tensorial maps of misfit dislocations at the strained GaAs-ZnTe-CdTe interfacial zone are reconstructed by use of digital processing of high-resolution transmission electron micrographs. Large distortions of the crystal lattice around Lomer dislocations are measured using the geometric phase technique. The integration of the dislocation distribution tensor field over a dislocation core region gives the in-plane components of their Burgers vectors. The accuracy of the method for the dislocation map reconstruction is tested by comparing the theoretical values of the so-called true Burgers vectors with those obtained from the integration of tensorial maps.
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