Applied Physics Letters · 2003 · 57 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesMetal-semiconductor ContactsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor SurfacesContact MaterialsContact ResistanceDevice FabricationFlip-chip Light-emitting DiodesLight-emitting DevicesLight-emitting Diode MaterialsOhmic ContactsSurface Layers
We have investigated a Zn–Ni solid solution/Ag scheme for use in producing high-quality ohmic contacts for flip-chip light-emitting diodes (LEDs). The as-deposited contact shows nonlinear I–V characteristics. However, oxidizing the contacts at temperatures of 350–550 °C for 1 min in air ambient results in linear I–V behaviors, yielding specific contact resistances of 10−4–10−5 Ω cm2. In addition, LEDs are fabricated with the oxidized Zn–Ni solid solution/Ag contacts and Ag single contacts. The typical I–V characteristics of the LEDs with the annealed Zn–Ni solid solution (2.5 nm)/Ag (200 nm) p-type contact layers reveal a forward-bias voltage of 3.25 V at an injection current of 20 mA, which is much better than that of the LEDs with the Ag (200 nm) contact layers.
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High-power AlGaInN flip-chip light-emitting diodes
Jonathan J. Wierer, D. A. Steigerwald, Michael R. Krames et al. · Applied Physics Letters · 2001 · 413 citations
High-transparency Ni/Au ohmic contact to <i>p</i>-type GaN
Jinn‐Kong Sheu, Yan‐Kuin Su, G. C. et al. · Applied Physics Letters · 1999 · 214 citations