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Landau Level Quantization Measured by Scanning Tunneling Spectroscopy on n-InAs(110)
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1998
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EngineeringTunneling MicroscopyPhysicsTopological HeterostructuresNanoelectronicsSurface ScienceApplied PhysicsQuantum MaterialsCondensed Matter PhysicsEnergy ReductionSemiconductor MaterialQuantum SolidMagnetic FieldLandau Level EnergySolid-state PhysicSemiconductor Nanostructures
The in-situ cleaved n-InAs(110) surface is studied by low temperature scanning tunneling spectroscopy and microscopy in magnetic fields up to 6 T perpendicular to the surface. The dI/dV(V) curves exhibit characteristic oscillations in magnetic field, which are attributed to Landau levels in the conduction band. The energy dependence of the effective electron mass is determined. Dopants reduce the Landau level energy. As expected, the energy reduction decreases with increasing Landau level number.