Publication | Closed Access
The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(311)B substrate
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Citations
15
References
2009
Year
Spacer Layer ThicknessElectrical EngineeringEngineeringPhysicsApplied PhysicsIngaas/ganas Quantum DotsGan Power DeviceVertical AlignmentCategoryiii-v SemiconductorOptoelectronicsCompound Semiconductor
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