Publication | Closed Access
Quantum Localization Effects on Spin Transport in Semiconductor Quantum Wells with Zinc-Blende Crystal Structure
32
Citations
8
References
1996
Year
EngineeringAntilocalization BehaviorMagnetic ResonanceSemiconductor Quantum WellsSpintronic MaterialSpin PhenomenonSemiconductorsQuantum Localization EffectsParticle DiffusionQuantum MaterialsZinc-blende Crystal StructureMaterials ScienceQuantum SciencePhysicsQuantum MagnetismSpintronicsNatural SciencesApplied PhysicsCondensed Matter PhysicsWeak Localization CorrectionsDisordered Quantum System
We have shown that due to weak localization corrections, in the spin-split conduction band of quantum wells with zinc-blende structure, the electron spin relaxation rate due to the D'yakonov-Perel' mechanism decreases logarithmically with decreasing frequency. The spin diffusion coefficient also decreases. This is quite different from antilocalization behavior at large times of the particle diffusion and conductivity. Possible experimental detection is suggested.
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