Raman spectra of structures with CdTe-, ZnTe-, and CdSe-based quantum dots and their relation to the fabrication technology

Abstract

Quantum-dot structures based on the CdTe, ZnTe, and CdSe semiconductors are prepared by molecular-beam epitaxy, colloid chemistry methods, and ball milling, and their Raman spectra are studied. Localized longitudinal phonons are observed in all spectra. The dependence of the localized phonon frequency on the thickness of the ZnTe barrier in CdTe/ZnTe quantum-dot superlattices is used to derive the dispersion relation for longitudinal phonons in ZnTe. The Raman spectra of ensembles of colloidal quantum dots differ from the spectra of the other objects by the absence of tellurium bands and a strong intensity of the longitudinal phonon band of CdTe. It is revealed that the spectra depend on the technology employed to prepare quantum-dot structures.