Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on AlOx dielectric

Abstract

The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited AlOx dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100°C). Since our p-channel TFT showed somewhat equivalent field mobility of 0.11cm2∕Vs compared to that of the n-channel device (0.75cm2∕Vs), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5nW at a low supply voltage of 7V.