Noise and Equivalent Circuit of Double Injection

Abstract

Measurements of the high-frequency noise of a silicon double-injection diode result in 〈i2〉=α·4kT(1/r)Δf with α=1.04 and in agreement with the literature. A new interpretation demands Nyquist noise with α≡1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double-injection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation-recombination noise is suggested as the prime source of the low-frequency noise.