Frequency mixing characteristics of room temperature resonant tunneling diodes at 100 and 200GHz

Abstract

Frequency mixing characteristics are examined for room temperature resonant tunneling diodes at 100GHz in the fundamental mode and at 200GHz in the second harmonic mode. At the peak voltage of the dc I-V curves, the output signal level was the highest for fundamental mixing and the lowest as a dip for second harmonic mixing. Experimentally obtained data are compared with the values calculated by a circuit analysis with finite sinusoidal voltage swings. The results indicate that the experimental results are in good agreement with the numerical predictions without capacitance for detection, fundamental mixing, and second harmonic mixing. Particularly, mixing characteristics with large input power, which cannot be treated by small signal analysis, are well explained by the model used here.