Gate‐Voltage Control of Optically‐ Induced Charges and Memory Effects in Polymer Field‐Effect Transistors

Abstract

Memory operations in polymer phototransistors have been demonstrated. A fraction of light-induced drain current in the depletion mode of a polythiophene-based field-effect transistor persists after switching off the photoexcitation, and can be erased by reversing the gate voltage (Vg) (see Figure). Write, store, read, and erase operations can be performed by applying a combination of gate voltages and incident light over a wide temperature range.