Publication | Closed Access
Influence of longitudinal and lateral confinements on excitons in cylindrical quantum dots of semiconductors
162
Citations
28
References
1993
Year
Cylindrical Quantum DotsEngineeringFinite Band OffsetsSemiconductor NanostructuresSemiconductorsQuantum ComputingQuantum DotsQuantum MaterialsFinite Potential BarriersLow-dimensional SystemCompound SemiconductorMaterials ScienceCylindrical Quantum DotElectrical EngineeringPhysicsQuantum DeviceLateral ConfinementsApplied PhysicsCondensed Matter Physics
The ground-state energy of an exciton in a cylindrical quantum dot with finite potential barriers is calculated by the variation method within the envelope-function approximation. The computations are performed in the cases of infinite and finite band offsets. The limit of a strictly two-dimensional quantum disk is discussed. Our numerical results are particularized to the GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As system with 0.10\ensuremath{\le}x\ensuremath{\le}0.30. In this case, the effect of the quantum confinement is the highest for dot dimensions near 50 \AA{}.
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