Low‐Firing, Temperature‐Stable Dielectric Compositions Based on Bismuth Nickel Zinc Niobates

Abstract

Low‐sintering dielectric materials with small temperature co‐efficients were developed. The newly developed materials are based on the Bi 2 (ZnNb 2 )O 9 and Bi 3 (Ni 2 Nb)O 9 system with a bismuth‐layered crystal structure. Preliminary results show that these materials have relatively large dielectric constants of 80 to 100, small temperature coefficients of ≤20 × 10 −6 /°C, and relatively large Q values of 2000 to 3000. Furthermore, these materials can be sintered at temperatures ranging from 850° to 950°C, and these low sintering temperatures might permit the use of a less expensive silver electrode. These materials compare favorably with the conventional NPO (small temperature coefficient) dielectric materials based on MgTiO 3 .