Carbon nanotube field-effect inverters

Abstract

This letter presents p-type metal–oxide–semiconductor (PMOS) and complementary metal–oxide–semiconductor (CMOS) inverters based on single-walled carbon nanotube field-effect transistors. The device structures consist of carbon nanotubes grown via a chemical-vapor deposition method and contacted by two metallic source/drain electrodes. Electrical properties of both p-type (without doping) and n-type nanotube transistors with potassium doping have been measured. By utilizing a resistor as the load for a p-type nanotube field-effect transistor, a PMOS inverter is demonstrated. Furthermore, by connecting a p-type nanotube transistor and an n-type nanotube transistor, a CMOS inverter is demonstrated. Both types of inverters exhibit nice transfer characteristics at room temperature. Our work represents one step forward toward integrated circuits based on nanoelectronic devices.