Fundamental Limits on the Mobility of Nanotube‐Based Semiconducting Inks

Abstract

High mobility and high on/off ratio thin-film transistors are fabricated using solution-based deposition of purified semiconducting carbon nanotubes. A comprehensive spectrum of the density starting from less than 10 tubes μm−2 to the high end of around 100 tubes μm−2 is investigated. This study provides the first important roadmap for the tradeoffs between mobility and on/off ratio in nanotube-based semiconducting inks. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.