InAs<i>y</i>P1−<i>y</i>/InP multiple quantum well optical modulators for solid-state lasers

Abstract

We report the operation of strained-layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid-state lasers such as neodymium-doped yttrium aluminum garnet. A structure having 50 periods of 100 Å InAsyP1−y quantum wells with 100 Å InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.