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Post-deposition annealing control of phase and texture for the sputtered MoO3 films
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Citations
20
References
2011
Year
Materials ScienceMaterials EngineeringPlanar TextureEngineeringCrystalline DefectsOxide ElectronicsSurface ScienceApplied PhysicsMoo3 FilmsThin Film Process TechnologyThin FilmsPulsed Laser DepositionChemical DepositionChemical Vapor DepositionThin Film ProcessingSputtered Moo3 Films
Thin films were sputtered on Si substrates from a metallic Mo target at room temperature and then annealed in air at the temperatures between 200–550 °C to form MoO3 of various phases and textures. The films annealed at 450 °C for 1 h showed a pure α phase and their texture was dependent on the ambient pressure during the initial sputtering deposition. The films sputtered under 3 mTorr were b-axis oriented with a broad in-plane alignment after annealing, while the films sputtered under higher pressures showed a texture with the Mo-O6 double-layers upright to the substrate. The films annealed between 350–400 °C were composed of both α and β phases. Below 350 °C, nearly a pure β phase was obtained, which showed a preferred a-axis orientation if the annealing temperature was in the range of 350–300 °C. Ammonia gas sensing properties were tested for the films. The β phase showed best sensitivity, while the α phase with the planar texture showed shortest recovery time. MoO3 films have wide-ranging applications, each of which prefers a specific phase and texture. This simple but productive method is therefore of practical importance.
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