Energy deposition of energetic silicon atoms within a silicon lattice

Abstract

The energy dependence of the ionization produced in silicon by recoiling silicon atoms was measured in the 4--54-keV energy interval. It is found that the fraction of the recoil energy that is dissipated as ionization follows an ${\mathit{E}}^{1/2}$ dependence which agrees well with the predictions of the theory of Lindhard et al. [Mat. Fys. Medd. 33, 10 (1963)].