Publication | Closed Access
Magnetoelectric Switching of Exchange Bias
462
Citations
18
References
2005
Year
MagnetismMultiferroicsSpintronicsElectrical EngineeringMagnetoelectric Heterostructure Cr2o3PhysicsEngineeringNatural SciencesApplied PhysicsMagnetic ResonanceMagnetoelectric SwitchingMagnetoelectronic DevicesMagnetic Topological InsulatorQuantum MagnetismMagnetic PropertyMagnetoresistanceElectric Freezing FieldsMagnetoelectric Materials
The perpendicular exchange bias field, H(EB), of the magnetoelectric heterostructure Cr2O3(111)/(Co/Pt)(3) changes sign after field cooling to below the Néel temperature of Cr2O3 in either parallel or antiparallel axial magnetic and electric freezing fields. The switching of H(EB) is explained by magnetoelectrically induced antiferromagnetic single domains which extend to the interface, where the direction of their end spins controls the sign of H(EB). Novel applications in magnetoelectronic devices seem possible.
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