Magnetoelectric Switching of Exchange Bias

Abstract

The perpendicular exchange bias field, ${H}_{\mathrm{EB}}$, of the magnetoelectric heterostructure ${\mathrm{Cr}}_{2}{\mathrm{O}}_{3}(111)/(\mathrm{Co}/\mathrm{Pt}{)}_{3}$ changes sign after field cooling to below the N\'eel temperature of ${\mathrm{Cr}}_{2}{\mathrm{O}}_{3}$ in either parallel or antiparallel axial magnetic and electric freezing fields. The switching of ${H}_{\mathrm{EB}}$ is explained by magnetoelectrically induced antiferromagnetic single domains which extend to the interface, where the direction of their end spins controls the sign of ${H}_{\mathrm{EB}}$. Novel applications in magnetoelectronic devices seem possible.