Oxide muonics: I. Modelling the electrical activity of hydrogen in semiconducting oxides

Abstract

A shallow-to-deep instability of hydrogen defect centres in narrow-gap oxide semiconductors is revealed by a study of the electronic structure and electrical activity of their muonium counterparts, a methodology that we term 'muonics'. In CdO, Ag₂O and Cu₂O, paramagnetic muonium centres show varying degrees of delocalization of the singly occupied orbital, their hyperfine constants spanning 4 orders of magnitude. PbO and RuO₂, on the other hand, show only electronically diamagnetic muon states, mimicking those of interstitial protons. Muonium in CdO shows shallow-donor behaviour, dissociating between 50 and 150 K; the effective ionization energy of 0.1 eV is at some variance with the effective-mass model but illustrates the possibility of hydrogen doping, inducing n-type conductivity as in the wider-gap oxide, ZnO. For Ag₂O, the principal donor level is deeper (0.25 eV) but ionization is nonetheless complete by room temperature. Striking examples of level-crossing and RF resonance spectroscopy reveal a more complex interplay of several metastable states in this case. In Cu₂O, muonium has quasi-atomic character and is stable to 600 K, although the electron orbital is substantially more delocalized than in the trapped-atom states known in certain wide-gap dielectric oxides. Its eventual disappearance towards 900 K, with an effective ionization energy of 1 eV, defines an electrically active level near mid-gap in this material.