High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M/sup 2/=1.9 at P=4.4 W

Abstract

High-power 808-nm tapered diode lasers mounted as single emitters with very good brightness were manufactured and analyzed. The beam propagation ratio M <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is 1.9 at 4.4 W; a very low beam propagation ratio M <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of 1.3 is achieved at 3.9 W. At 808 nm, the high brightness of 460 MWmiddotcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> sr <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> never reported before is a step forward toward new applications of tapered diode lasers