Electronics Letters · 1989 · 20 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsQuantum ConfinementQuantum WellsSemiconductor HeterostructuresSemiconductor LasersCarrier Confinement In Quantum WellsHeterostructure LasersHigh-power Semiconductor LasersMetalorganic Vapor Phase EpitaxyQuantum Well GrowthQuantum Well HeterostructuresQuantum Well LasersQuantum Well Structures
A maximum total CW output power of 190 mW has been obtained at 1.55μm using a buried heterostructure graded index separate confinement multiple quantum well laser grown entirely by metalorganic vapour-phase epitaxy.
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