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Simultaneous activation of several second messengers in hypoxia‐induced hyperpermeability of brain derived endothelial cells
105
Citations
64
References
2003
Year
Endothelial CellsCellular PhysiologySocial SciencesOxidative StressCerebral Vascular RegulationInflammationBrain InjuryNeurologyCell SignalingPermeability ChangesHypoxia (Medicine)Simultaneous ActivationVascular BiologyCerebral Blood FlowHypoxia‐induced HyperpermeabilityReperfusion InjuryCell BiologyProtein Kinase GVegf-induced Permeability ChangesSignal TransductionNeurophysiologyPhysiologyEndothelial DysfunctionTissue OxygenationNeuroscienceMedicine
In vivo, ischemia is known to damage the blood-brain barrier (BBB) leading to the development of vasogenic brain edema. Hypoxia-induced vascular endothelial growth factor (VEGF) has been shown to be a key regulator of these permeability changes. However, the signaling pathways that underlie VEGF-induced hyperpermeability are incompletely understood. In this study, we demonstrate that hypoxia- and VEGF-induced permeability changes depend on activation of phospholipase Cgamma (PLCgamma), phosphatidylinositol 3-kinase/Akt (PI3-K/Akt), and protein kinase G (PKG). Inhibition of mitogen-activated protein kinases (MAPK) and of the protein kinase C (PKC) did not affect permeability at all. Paralleling hypoxia- and VEGF-induced permeability changes, localization of the tight junction proteins occludin, zonula occludens-1 (ZO-1), and ZO-2 along the cell membrane changed from a continuous to a more discontinuous expression pattern during hypoxia. In particular, localization of ZO-1 and ZO-2 expression moved from the cell membrane to the cytoplasm and nucleus whereas occludin expression remained at the cell membrane. Inhibition of PLCgamma, PI3-kinase, and PKG abolished these hypoxia-induced changes. These findings demonstrate that hypoxia and VEGF induce permeability through rearrangement of endothelial junctional proteins which involves activation of the PLCgamma and PI3-K/AKT pathway leading to the activation of PKG.
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