Recombination in the end regions of pin diodes

Auger coefficients for highly doped and highly excited silicon

J. Dziewior, W. Schmid · Applied Physics Letters · 1977 · 798 citations

Engineering, Materials Science, Optoelectronics +15

Measurements of bandgap narrowing in Si bipolar transistors

J.W. Slotboom, H.C. de Graaff · Solid-State Electronics · 1976 · 752 citations

Engineering, Electrical Engineering, Physics +13

The pn-product in silicon

J.W. Slotboom · Solid-State Electronics · 1977 · 200 citations

Engineering, Electrical Engineering, Materials Science +8

The forward characteristic of silicon power rectifiers at high current densities

A. Herlet · Solid-State Electronics · 1968 · 173 citations

Engineering, Electrical Engineering, Materials Science +15

Auger-rekombination in Si

J.D Beck, R. Conradt · Solid State Communications · 1973 · 139 citations