Thermal contact resistance between graphene and silicon dioxide

Abstract

The thermal contact resistance between graphene and silicon dioxide was measured using a differential 3ω method. The sample thicknesses were 1.2 (single-layer graphene), 1.5, 2.8, and 3.0 nm, as determined by atomic force microscopy. All samples exhibited approximately the same temperature trend from 42 to 310 K, with no clear thickness dependence. The contact resistance at room temperature ranges from 5.6×10−9 to 1.2×10−8 m2 K/W, which is significantly lower than previous measurements involving related carbon materials. These results underscore graphene’s potential for applications in microelectronics and thermal management structures.