Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin states in silicon based quantum computers.