Europhysics Letters (EPL) · 2008 · 113 citations · 16 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSolid State PhysicsElectronic Band StructureElectronic Structure Of SolidsPhotoelectron SpectroscopySurface PhysicsSurface SpectroscopyThermoelectric MaterialsAngle-resolved Photoelectron SpectroscopyAngle-resolved Photoemission SpectroscopyBand BendingBrillouin ZonesSurface Band BendingSurface StatesThermoelectric Figure Of MeritThermoelectric Properties
The electronic structure of p-type doped Bi2Te3 is studied by angle-resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off. the Gamma-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of Bi2Te3. A successive time-dependent ARPES measurement also reveals that the electron-like bands crossing E-F near the (Gamma) under bar -point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of Bi2Te3. Copyright (c) EPLA, 2008.
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Thin-film thermoelectric devices with high room-temperature figures of merit
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