Direct observation of laser-induced solid-phase epitaxial crystallization by time-resolved optical reflectivity

Abstract

Direct measurement of solid phase epitaxial crystallization during cw laser annealing of ion-implanted silicon is reported. The measurement technique utilizes optical interference effects between reflected light from the sample surface and from the epitaxial growth plane to time-resolve the growth process with high spatial resolution. Laser-induced solid phase epitaxial growth was monitored for two values of incident laser power; corresponding epitaxial growth rates and calculated surface temperatures are given.