4H-SiC UV photo detectors with large area and very high specific detectivity

Abstract

Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 cm/sup 2/. The I-V characteristics and photoresponse spectra have been measured and analyzed. For a 5 mm/spl times/5 mm area device leakage current lower than 10/sup -15/ A at zero bias and 1.2/spl times/10/sup -14/ A at -1 V have been established. The quantum efficiency is over 30% from 240 to 320 nm. The specific detectivity, D/sup */, has been calculated from the directly measured leakage current and quantum efficiency are shown to be higher than 10/sup 15/ cmHz/sup 1/2//W from 210 to 350 nm with a peak D/sup */ of 3.6/spl times/10/sup 15/ cmHz/sup 1/2//W at 300 nm.