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Photoluminescence measurements in the phase transition region for CdS thin films
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1996
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EngineeringCrystal Growth TechnologyPhase Transition RegionPhotoluminescence MeasurementsChemistryLuminescence PropertySemiconductor NanostructuresSemiconductorsIi-vi SemiconductorOptical PropertiesCrystalline Phase TransitionCompound SemiconductorMaterials SciencePhotoluminescencePhysicsCrystalline DefectsOptoelectronic MaterialsCds Thin FilmsNanocrystalline MaterialNatural SciencesApplied PhysicsThin FilmsCubic Crystalline StructureSolar Cell Materials
CdS polycrystalline thin films were grown by the chemical bath deposition technique at 80 °C onto glass substrates. The films grow in the cubic crystalline structure as determined by x-ray diffraction analysis. After thermal annealing in S2 and Ar atmospheres, the CdS changes from the metastable zinc blende phase to a stable wurtzite one. The cubic-to-hexagonal transition temperature has been determined to be 370 °C, as seen by the photoluminescence spectra and the x-ray diffraction patterns of the different samples. These spectra show the well-known green emission band of the CdS centered at 2.4 eV for the as-grown sample, which shifts to 2.25 eV for the sample annealed at 365 °C just before the phase transition takes place. For the sample annealed at 374 °C, an abrupt blueshift of the green band occurs going back to an energy value of 2.4 eV, when the crystalline phase transition occurs.