Magnetotransport of p-type GaMnN assisted by highly conductive precipitates

Abstract

GaMnN growth on GaAs (100) using a GaN single precursor via molecular beam epitaxy was undertaken. The grown layers revealed p-type conduction. It is confirmed that p-GaMnN reveals room temperature ferromagnetism with hysteresis loop having a coercivity of ∼100 Oe. The segregated phase showing a transition temperature of ∼200 K is assigned to Mn3GaN, and which enhances the conductivity of the surrounding GaMnN region. As a consequence, the GaMnN layer with segregation revealed an anomalous Hall effect at room temperature proving magnetotransport in GaMnN phase. The enhanced conductivity of GaMnN by the highly conductive second phase also revealed the importance of the role of the free carriers in the carrier-mediated ferromagnetism.