Stabilization of face-centered-cubic Mn films via epitaxial growth on GaAs(001)

Abstract

The epitaxial growth of fcc Mn films on the GaAs(001) surface has been achieved. The films are studied by in situ reflection high energy electron diffraction (RHEED) and ex situ x-ray diffraction (XRD). The lattice parameters of the metastable Mn films are determined to be 0.362 nm. A transition region composed of a Mn-Ga-As alloy is formed at the Mn/GaAs interfaces and is clearly verified by XRD measurements.