Quantized acoustoelectric current in an InGaAs quantum well

Abstract

We have measured the acoustoelectric current generated in a GaAs∕Al0.33Ga0.67As heterostructure incorporating an In0.1Ga0.9As layer at the heterointerface. This wafer is designed to give a two-dimensional electron gas with a high electron g factor. We demonstrate that this wafer is of sufficient quality to produce quantized acoustoelectric current plateaus and has potential for future spintronic and quantum information technology applications.