Publication | Closed Access
Low-energy electron-microscopy investigations of orientational phase separation on vicinal Si(111) surfaces
100
Citations
9
References
1991
Year
EngineeringMicroscopyStepped SiSilicon On InsulatorElastic RelaxationsTunneling MicroscopyElectron MicroscopySurface ReconstructionMaterials SciencePhysicsMicroanalysisVicinal SiMicrostructureSurface CharacterizationLow-energy Electron-microscopy InvestigationsSurface AnalysisSurface ScienceApplied PhysicsCondensed Matter PhysicsElectron MicroscopeLow-energy Electron MicroscopyOrientational Phase Separation
We have used low-energy electron microscopy to investigate in real time the thermodynamically driven faceting of stepped Si(111) surfaces into (7\ifmmode\times\else\texttimes\fi{}7) reconstructed (111) facets and ``step bunches.'' Our data are inconsistent with the thermodynamic expectation that an isolated linear facet should grow without limit: Instead we find that the width of the (7\ifmmode\times\else\texttimes\fi{}7) reconstructed (111) facets quickly reaches a constant maximum size. We discuss the possibility that elastic relaxations caused by the facet edges are responsible for the finite facet width.
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