GaAs microwave Schottky-gate FET - Concepedia

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GaAs microwave Schottky-gate FET

22

Citations

0

References

1972

Year

C.A. Liechti, Elise Gowen, Jerome B. Cohen

Unknown Venue

Electrical EngineeringNegligible Parasitic ReactancesEngineeringRf SemiconductorSchottky-gate FetSchottky Barrier GateElectronic EngineeringAntennaApplied PhysicsHigh-frequency DeviceMicroelectronicsMicrowave EngineeringGaas Fet Transistor

Abstract

A GaAs FET transistor with 0.9μm Schottky barrier gate that exhibits an extrapolated maximum frequency of oscillation of 40 GHz has been developed. Coupling of the transistor to coplanar waveguides has been accomplished with negligible parasitic reactances.