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Crystal Growth and Properties of the Compounds CuGa3Se5 and CuIn3Se5
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2002
Year
Materials ScienceCrystal StructureHigh Temperature MaterialsDirected CrystallizationEngineeringCrystal MaterialCrystal Growth TechnologyDifferential Thermal AnalysisApplied PhysicsX-ray Diffraction MethodThermal PropertyThermodynamicsChemistrySolidificationCrystal FormationCrystallographyCrystal Structure DesignMicrostructure
CuIn3Se5 and CuGa3Se5 uniform single crystals 12 mm in diameter and 40 mm in length with the chalcopyrite-related structure were prepared by directed crystallization of the melt. The melting points of these compounds were defined by means of the differential thermal analysis (DTA). The lattice parameters a and c as well as the axial thermal expansion coefficients αa and αc were determined as a function of temperature in the range from 90 to 650 K by the X-ray diffraction method (XRD). It is found that for both the compounds the coefficients of expansion along the a-axis are larger than those along the c-axis over the entire temperature range studied.