Saturated vapor pressure over AgGaGeS4 crystals

Abstract

The vaporization behavior of AgGaGeS4 crystals has been studied using vapor pressure measurements (gradient heating under dynamic vacuum, frozen equilibrium method, and membrane measurements). AgGaGeS4 has been shown to vaporize incongruently, losing predominantly GeS2. The total saturated vapor pressure over AgGaGeS4 crystals has been measured, and has been represented by a best fit equation. The results are discussed in relation to earlier data on the melting point and melting behavior of AgGaGeS4 crystals.