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(110) YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> Homoepitaxy on (110) YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> Single Crystal Substrates
20
Citations
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References
1997
Year
Thin Film PhysicsEngineeringCrystal Growth TechnologyThin Film Process TechnologyChemistrySuperconductivityHigh Tc SuperconductorsMagnetic Thin FilmsEpitaxial GrowthCu 3Thin Film ProcessingMaterials ScienceCrystal MaterialCrystallographyCrystal Structure DesignO 7-δ FilmsNatural SciencesSurface ScienceApplied PhysicsCondensed Matter PhysicsThin FilmsHomoepitaxial Growth
We report on high-quality (110) oriented YBa 2 Cu 3 O 7-δ films grown on mechanically polished (110) YBa 2 Cu 3 O 7-δ single crystal substrates by off-axis RF magnetron sputtering method. The homoepitaxial growth keeps the original surface flatness of substrates. Atomic Force Microscopy (AFM) measurements of the films show a surface roughness of less than 1 nm over 1×1 µm 2 area range. Furthermore, cross sectional Transmission Electron Microscopy (TEM) and Reflection High Energy Electron Diffraction (RHEED) observations confirm the surface flatness of our films. The homoepitaxial films show a high T c (zero resistivity) of 90–92 K.
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