Optically detected microwave-induced impact ionization of ytterbium bound excitons in InP

Abstract

Optically detected microwave-induced impact ionization of excitons and shallow donors is studied in Yb-doped InP grown by metalorganic chemical vapor deposition. The experimental results directly confirm that Yb3+ intrashell emission is induced by nonradiative recombination of Yb bound excitons due to an impurity Auger effect. Yb3+ ions in InP are found to bind excitons with the electron being localized first, followed by subsequent hole capture.