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Large dielectric tunability and microwave properties of Mn-doped (Ba,Sr)TiO3 thin films

117

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15

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2005

Year

Abstract

Ferroelectric Ba0.6Sr0.4TiO3 thin films with 2% Mn additional doping were grown on (001) MgO by pulsed laser deposition. The microstructural studies from x-ray diffraction and transmission electron microscopy indicate that the films are highly epitaxial with c-axis oriented and atomic sharp interface. Dielectric property measurements at 1 MHz and room temperature reveal that the as-grown films have outstanding dielectric properties with large tunability of 80% at 40KV∕cm, very large dielectric constant value of 3800, and extra low dielectric loss of only 0.001. The high frequency (10–30 GHz) dielectric measurements demonstrate that the films are excellent in both dielectric property and very low dielectric insertion loss. Compared with the pure BSTO films or traditional doping, the additional doping of Mn in BSTO thin films can significantly improve the dielectric property of the as-grown films.

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