Applied Physics Letters · 2005 · 188 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesField-effect TransistorsIntegrated Circuit DevicesOrganic Electronic MaterialsOrganic SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsCarrier Transport In Organic SemiconductorsHeterojunction DevicesHeterojunctionsOrganic ElectronicsOrganic Field-effect TransistorsOrganic NanoelectronicsSemiconductor HeterojunctionsThreshold Voltage
Heterojunction organic field-effect transistor (OFET) based on p-type copper phthalocyanine (CuPc) and n-type hexadecafluorophthalocyaninatocopper (F16CuPc) was demonstrated. The heterojunction OFETs can be operated in normally-on (depletion-accumulation) mode, which attributes to the existence of a new conductive channel at the interface of heterojunction. The new channel is originated from accumulation of electrons and holes induced by the interface dipole. Compared with the device with CuPc single layer, the double channel transistor displays improved field-effect mobility from 0.017to0.042cm2∕Vs, and threshold voltage shifts from −17to+19V. In addition, ambipolar electric characteristics have been observed from the heterojunction OFETs.
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Large-scale complementary integrated circuits based on organic transistors
B. K. Crone, A. Dodabalapur, Y.-Y. Lin et al. · Nature · 2000 · 1.3K citations
Engineering, Computer Engineering, Electrical Engineering +14